Analog Power P-Channel 80-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power P-Channel 80-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
AM2381P
PRODUCT SUMMARY VDS (V) rDS(on ) (Ω) 0.5 @ VGS = -10V -80 0.6 @ VGS = -4.5V
ID (A) 1.4 1.3
G D S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source
Voltage -80 V ±20 Gate-Source
Voltage VGS
www.DataSheet.co.kr
o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
0.9 0.7 ±1.6 -1 1.3 0.8 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
RT HJA
Maximum Units
100 166
o
t <= 5 sec Steady-State
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM2381_A
Datasheet pdf - http://www.DataSheet4U.net/
Analog Power
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