AM29DL640G

PRELIMINARY Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Flexible Bank architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions. TM ■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ Minimum 1 million write cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Supports Common Flash Memory Interface (CFI) ■ Erase Suspend/Erase Resume — Suspends erase operations to allow reading from other sectors in same bank ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Boot Sectors — Top and bottom boot sectors in the same device — Any combination of sectors can be...