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AM29LV200 Datasheet

Part Number AM29LV200
Manufacturers Advanced Micro Devices
Logo Advanced Micro Devices
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Datasheet AM29LV200 DatasheetAM29LV200 Datasheet (PDF)

PRELIMINARY Am29LV200 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s High performance — Full voltage range: access times as fast as 100 ns — Regulated voltage range.

  AM29LV200   AM29LV200






Part Number AM29LV200B
Manufacturers Advanced Micro Devices
Logo Advanced Micro Devices
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Datasheet AM29LV200 DatasheetAM29LV200B Datasheet (PDF)

Am29LV200B Data Sheet The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alternates. The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product..

  AM29LV200   AM29LV200







2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

PRELIMINARY Am29LV200 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s High performance — Full voltage range: access times as fast as 100 ns — Regulated voltage range: access times as fast as 90 ns s Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 10 mA read current — 20 mA program/erase current s Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses s Typical 1,000,000 writ.


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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