Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Analog Power
N-Channel 60-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters
AM30N06-39D
VDS (V) 60
PRODUCT SUMMARY rDS(on) (mΩ)
38 @ VGS = 10V 50 @ VGS = 4.5V
ID(A) 30 26
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 60
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current b
TC=25°C
ID IDM
30 100
Continuous Source Current (Diode Conduction)
IS 30
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copp...