Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power
N-Channel 60-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe DPAK saves board space
Fast switching speed High performance trench technology
AM30N06-39IE
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60 38 @ VGS = 10V 50 @ VGS = 4.5V
ID (A) 30
26
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Currentb
VDS VGS TC=25oC ID IDM
60 V ±20 19 A 40
Continuous Source Current (Diode Conduction)a
IS 30 A
Power Dissipationa Operating Ju...