Analog Power
AM3836N
N-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 63 @ VGS = 4.5V 110 @ VGS = 2.5V
ID (A) 3.5.
N-Channel MOSFET
Analog Power
AM3836N
N-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 63 @ VGS = 4.5V 110 @ VGS = 2.5V
ID (A) 3.5
3.0
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V) Diode Forward Voltage
IF (A)
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
30
0.48V @ 1.0A
1.0
TSOP-6 Top View
DK
A1 S2 G3
6K
G
5 N/C
SA 4D
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Units
Drain-Source Voltage (MOSFET) Re.