Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power
N-Channel 20-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe SOIC-8 saves board space
Fast switching speed High performance trench technology
AM4424N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
20 22 @VGS= 4.5V 28 @VGS= 2.5V
ID (A) 9.7
8.6
18 27 36 45
ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED)
Parameter
Symbol Limit Units
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
20 V ±8 ±9.7 ±8.0 A ±50
Continuous Source Current (Diode Conduction)a
IS 2.3 A
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