Analog Power
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Analog Power
N-Channel 20-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: Load Switches DC/DC Conversion Motor Drives
AM4426N
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
5.5 @ VGS = 4.5V 7 @ VGS = 2.5V
ID (A) 16 12
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 20
Gate-Source
Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C
VGS ID IDM IS
±8 16 60 3.6
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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