Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power
P-Channel 30-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe SOIC-8 saves board space
Fast switching speed High performance trench technology
AM4835EP
PRODUCT SUMMARY
VDS (V) -30
rDS(on) m(Ω) 19 @ VGS = -10V 30 @ VGS = -4.5V
SOIC-8 Top View
ID (A) -9.5 -7.5
S
S1 S2 S3 G4
8D 7D
G
6D
5
D
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
-30 V ±25 -9.5 ...