AM4N65R

AM4N65R 650V 4A Advanced N-Ch Power MOSFET FEATURES ■ Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.) ■ Low gate charge : Qg = 12nC (Typ.) ■ Low reverse transfer capacitance : Crss = 12pF (Typ.) ■ Lower EMI Noise ■ RoHS compliant device ■ 100% avalanche tested Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code Ordering Information AM4N65RF TO-220F AM4N65RD D S G TO-252 Part No. AM4N65RF AM4N65RD Package TO-220F TO-252 Packing Tube Tape & Reel Finish Sn Sn Halogen Free Free Packing Unit 5,000ea 2,500ea Maximum Ratings (TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Power Dissipation Single pulsed avalanche energy (Note 2) Avalanche current (Repetitive) (Note 1) Repetitive avalanche energy (Note 1) Junction temperature Storage temperature range *Limited only maximum junction temperature Symbol VDSS VGSS TC = 25℃ ID TC = 100℃ IDM PD TO-220F TO-252 EAS IAR EAR TJ Tstg Rating 650 ±30 4 2.53 16 32 48 173 4 3.2 150 -55~150 Unit V V A A W mJ A mJ ℃ www.apsemi.com REV. 00 1 AM4N65R Thermal Characteristic Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth( j-c) Rth( j-a) Rating Max. 3.9 Max. 62.5 Electrical Characteristics (TC=25 °C, unless otherwise noted) Unit ℃/W Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off curren...