AM6N40R

AM6N40R 400V 6A Low Qg N-Ch Power MOSFET FEATURES ■ Low drain-source On resistance : RDS(on) = 0.9Ω (Typ.) ■ Low gate charge : Qg = 14nC (Typ.) ■ Low reverse transfer capacitance : Crss = 9.5pF (Typ.) ■ RoHS compliant device ■ 100% avalanche tested APPLICATIONS ■ High speed switching ■ LED power ■ Motor power Ordering Information D S G Part No AM6N40RD Package TO-252 Packing Reel & Tape Finish Sn Halogen Free Packing Unit 2,500ea Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code Maximum Ratings (TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range *Limited only maximum junction temperature Symbol VDS VGS TC = 25℃ ID TC = 100℃ IDM EAS IAR EAR PD TJ Tstg www.apsemi.com Rating 400 ±30 5.5 3.46 22 380 5.5 5.5 55 150 -55~150 Unit V V A A mJ A mJ W ℃ ℃ REV. 00 1 AM6N40R Thermal Characteristic Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth( j-c) Rth( j-a) Rating Max. 2.27 Max. 62.5 Unit ℃/W Electrical Characteristics (TC=25 °C, unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resista...