| Part Number | AM82731-006 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | RF & MICROWAVE TRANSISTORS |
| Description | The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This dev... |
| Features |
tary and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS Ic VCC TJ T STG
Power Dissipation* Device Current*
(TC
≤100°C)
40 1.8 34 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junc... |
| Datasheet | AM82731-006 pdf datasheet |
| Part Number | AM82731-003 |
| Manufacturer | STMicroelectronics |
| Title | RF & MICROWAVE TRANSISTORS |
| Description | The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This dev. |
| Features |
r high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
23 0.9 34 250 − 65 to +200
W A V °C °C
Collector-Supply Voltag. |
| Datasheet | AM82731-003 pdf datasheet |
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