Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Analog Power
N-Channel 100-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
AM90N10-19P
VDS (V) 100
PRODUCT SUMMARY rDS(on) (mΩ)
19 @ VGS = 10V 24 @ VGS = 5.5V
ID (A) 90a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 100
Gate-Source
Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 90 300 90 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient c Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 0.5
Units °C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number: DS_AM90N10-19P_1A
Analog Power
AM90N10-19P
Electrical Characteristics
Parameter
Gate-Source Threshold
Voltage Gate-Body Leakage
Zero Gate
Voltage Drain Current
On-State Drain Current a Drain-Source On-Resistance a
Forward Transconductance a Diode Forward
Voltage a
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Ca...
