Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Analog Power
N-Channel 200-V (D-S)
MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM90N20-140B
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
200 240 @ VGS = 10V
ID (A) 29
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 200
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current a
TC=25°C
ID IDM
29 100
Continuous Source Current (Diode Conduction)
TC=25°C
IS
29
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 0.5
Units °C/W
Notes a. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM90N20-140B_1A
Analog Power
AM90N20-140B
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold
Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±100 nA
Zero Gate
Voltage Drain Current
IDSS
VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 10 V
40
A
Drain-Source On-Resistance a
rDS(on)
VGS = 10 V, ID = 10 A
240 mΩ
Forwar...
