Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Analog Power
P-Channel 30-V (D-S)
MOSFET
These miniature surface mount
MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe TO-220 saves board space
Fast switching speed High performance trench technology
AM90P03-02P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 2.9 @ VGS = 10V 3.8 @ VGS = 4.5V
ID (A) 90a
D1
G1
S1 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS VGS TC=25oC ID IDM IS TC=25oC PD
TJ, Tstg
-40 ±20 90 390 110 300 -55 to 175
V
A
A W oC
THERMALRESISTANCERATINGS
Parameter
Symbol
MaximumJunction-to-Ambienta
RθJA
MaximumJunction-to-Case
RθJC
Notes a. Package Limited b. Pulse width limited by maximum junction temperature
Maximum Units
62.5 oC/W 0.5 oC/W
PRELIMINARY
1 Publication Order Number: DS-AM90P03-02_A
Analog Power
AM90P03-02P
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Thres...