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AM90P20-170B Datasheet

Part Number AM90P20-170B
Manufacturers Analog Power
Logo Analog Power
Description P-Channel MOSFET
Datasheet AM90P20-170B DatasheetAM90P20-170B Datasheet (PDF)

Analog Power P-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P20-170B VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±.

  AM90P20-170B   AM90P20-170B






P-Channel MOSFET

Analog Power P-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90P20-170B VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM -34 -150 Continuous Source Current (Diode Conduction) TC=25°C IS -34 Power Dissipation TC=25°C PD 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90P20-170B_1A Analog Power AM90P20-170B Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -160 V, VGS = 0 V VDS = -160 V, VGS = 0 V, TJ = 55°C -1 uA -25 On-State Drain Current a ID(on) VDS = -5 V, VGS = -10 V -50 A Drain-Source On-Resistance a rDS(on) VGS.


2016-10-08 : 2N7002KB    2N7002KG8    2N7002KG    2N7002KU    2N7002KU    AM100N20-40FP    AM110P04-04M2B    AM110P06-06B    AM110P06-08B    AM110P08-11B   


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