AM9433P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. AM9433P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 44 @ VGS = -4.5V -20 68 @ VGS = -2.5V 150 @ VGS = -1.8V ID (A) -8.3 -6.7 -4.5 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS Drain-Source Voltage -20 V Gate-Source Voltage VGS ±12 www.DataSheet.co.kr o Continuous Drain Currenta Pulsed Drain Current b a T A=25oC T A=70 C o ID IDM IS -8.3 -6.7 ±50 -2.1 3.1 2.0 -55 to 150 o A A W C Continuous Source Current (Diode Conduction) Power Dissipation a T A=25 C T A=70 C o o PD TJ, T stg Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady-State Symbol RθJA Maximum 40 70 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM9433_G Datasheet pdf - http:/...