AM9569D

AM9569D P-CHANNEL ENHANCEMENT MODE POWER MOSFET  GENERAL DESCRIPTION The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  FEATURES ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free  ABSOLUTE MAXIMUM RATINGS BVDSS RDS(ON) ID -40V 90mΩ -14A VÛmw`RyÑb€ Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, w.goftech.com VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range  THERMAL DATA Symbol VDS VGS ID@TC=25°C ID@TC=100°C IDM PD@TC=25°C TSTG TJ Rating -40 ±20 -14 -8.6 -40 26 0.21 -55 to 150 -55 to 150 Unit V V A A A W W/°C °C °C Characteristics Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Maximum Thermal Resistance, Junction-ambient Symbol Rating Unit Rthj-c 4.8 °C/W Rthj-a 62.5 °C/W Rthj-a 110 °C/W 1/5 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Aug.25, 2011 AM9569D  ELECTRICAL CHARACTERISTICS (VCC = 5V, TA=25°C, unless otherwise specified) Characteristics Symbol Conditions Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA Breakdown Voltage Temperature ΔBV /ΔTj Reference to 25°C, DSS ID=-1mA Coefficient Static Drain-Source RDS(ON) VGS=-10V, ID=-10A On-Resist...