AM9569S

GOFO TEL 0755-8398 3377 135 9011 2223 http://www.gofotech.com AM9569S P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant Description The Advanced Power MOSFETs from Axelite provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID D D D D SO-8 G Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -40 ± 20 -4.2 -3.4 -40 2.5 0.02 -55 to 150 -55 to 150 Max. Value 50 -40V 90mΩ -4.2A G SS S D S Units V V A A A W W/℃ ℃ ℃ Unit ℃/W 1/5 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 May. 25, 2011 GOFO TEL 0755-8398 3377 135 9011 2223 http://www.gofotech.com AM9569S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf ...