AMA930N

Analog Power AMA930N Dual N-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 63 @ VGS = 4.5V 110 @ VGS = 2.5V ID(A) 4.4 3.4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 4.4 3.5 ±10 2.2 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 60 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse wi...