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AMIS-732512 Datasheet

Part Number AMIS-732512
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description Wide Aperture Spectroscopic Photodiode Arrays
Datasheet AMIS-732512 DatasheetAMIS-732512 Datasheet (PDF)

AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array.

  AMIS-732512   AMIS-732512






Wide Aperture Spectroscopic Photodiode Arrays

AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50µm aperture pitch x 2500µm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths - 128, 256 and 512 pixels. The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pin out configuration is seen in Figure 1. www.DataSheet4U.com Figure 1: Pin Out Configuration 2.0 Features • • • • • • • • • • 65pC saturation capacity for wide dynamic range Wide spectral response (180 – 1000nm) for UV and IR response NP junction photodiodes with superior resistance to UV damage Low dark current Integration time up to nine seconds at room temperature Integration time extended to hours by cooling High linearity Low power dissipation (less than 1mW) Geometrical structure for enhanced stability and registra.


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