APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
• • • •
30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V RDS(ON)=27mΩ(typ....
APM7313
Dual N-Channel Enhancement Mode
MOSFET
Features
30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V RDS(ON)=27mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
Pin Description
SO-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
Top View
Applications
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G1
D1
D1
D2
D2
G2
S1
S2
N-Channel
MOSFET N-Channel
MOSFET
Ordering and Marking Information
APM 7313
H a n d lin g C o d e Tem p. R ange P ackage C ode P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel
APM 7313 K :
APM 7313 XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS Drain-Source
Voltage Gate-Source
Voltage Parameter
(TA = 25°C unless otherwise noted)
Rating 30 ±20 V Unit
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/
APM7313
Absolute Maximum Ratings (Cont.)
Symbol ID
*
(TA = 25°C unless otherwise noted)
Rating 6 24 2.5 1.0 150 -55 to 150 50 A W W °C °C °C/W Unit
Parameter Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation TA=25...