N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications
SMPS PFC
Features
Low Qg Low Rdson RoHS compliant
1 Gate 2 Drain 3 Source
Table 1. Device summary
Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value
TO-220FP TO-220 D²PAK I2PAK DPAK IPAK
2
Packaging Tube Tube Tape and reel Tape and reel .
N-Chanel Power MOSFET
N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications
SMPS PFC
Features
Low Qg Low Rdson RoHS compliant
1 Gate 2 Drain 3 Source
Table 1. Device summary
Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value
TO-220FP TO-220 D²PAK I2PAK DPAK IPAK
2
Packaging Tube Tube Tape and reel Tape and reel Tube Tube Units
Table 2. Absolute Maximum Ratings
Symbol ID ID IDM(1) VGS PD Parameter Drain current (continuous), VGS= at TC = 25°C Drain current (continuous), VGS= at TC = 100°C Drain current (pulsed) at TC = 25°C Gate-source voltage Maximum Power Dissipation at TC = 25°C Maximum Power Dissipation at TC = 100°C Storage temperature Operating junction temperature Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
4 2,5 16 ±20 25 ― -55 … +150 -55 … +150 260 1,13
Value
TO-220FP TO-220 D²PAK I PAK
2
A A A V
70
W W
Tstg Tj TL
°C
―
N·m Value
DPAK IPAK
Table 3. Thermal resistance
Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max
5 62,5
1,78 100
°C/W °C/W
1
Free Datasheet http://www.Datasheet4U.com
N-Chanel Power MOSFET
Table 4. Electrical Characteristics of the MOSFET
Symbol V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/ TJ RDS(on) gfs Ciss Coss Crss Qg(tot) Qgs Qgd td(on) tr td(off) tf Param.