AO3407A
30V P-Channel MOSFET
General Description
The AO3407A uses advanced trench technology to provide excellent RDS(O...
AO3407A
30V P-Channel
MOSFET
General Description
The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4.3A < 48mΩ < 78mΩ
SOT23 Top View Bottom View
D
D
D
S G S
G
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG
Maximum -30 ±20 -4.3 -3.5 -25 1.4 0.9 -55 to 150
Units V V A
W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units ° C/W ° C/W ° C/W
Rev 5: Nov 2011
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AO3407A
C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward
Voltage VDS=-5V, ID=-4.3A IS=-1A,VGS=0V TJ=125° C -1.4 -25 34 52 54 10 -0.7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.5 100 65 7.5 9.2 VGS=-10V, VD...