(PDF) AO3414 Datasheet PDF - N-Channel Enhancement Mode Field Effect Transistor




Alpha & Omega Semiconductors
AO3414 N-Channel Enhancement Mode Field Effect Transistor
AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM appli
AO3414

Kexin
AO3414 N-Channel Enhancement Mode Field Effect Transistor
SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 MOSFET IC Unit: mm Features VDS (V) = 20V +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 RDS(ON) RDS(ON) 63m 87m (VGS = 2.5V) (VGS = 1.8V) 0.55 RDS(ON) 50m (VGS =
AO3414

Freescale
AO3414 N-Channel Enhancement Mode Field Effect Transistor
Freescale N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and batt
AO3414

Tuofeng Semiconductor
AO3414 N-Channel Enhancement Mode Field Effect Transistor
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414 AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This
AO3414

Alpha & Omega Semiconductors
AO3414L N-Channel Enhancement Mode Field Effect Transistor
Rev 3: Nov 2004 AO3414, AO3414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suit
AO3414




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