AO3415A
20V P-Channel MOSFET
General Description
The AO3415A uses advanced trench technology to provide excellent RDS(O...
AO3415A
20V P-Channel
MOSFET
General Description
The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch applications.
Product Summary
VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -4A < 41mΩ < 53mΩ < 65mΩ
SOT23 Top View Bottom View D
D
D
G S G S G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source
Voltage VDS Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG
Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150
Units V V A
W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 65 85 43
Max 80 100 52
Units ° C/W ° C/W ° C/W
Rev 2: Sep 2011
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Free Datasheet http://www.datasheet4u.com/
AO3415A
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Volt...