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AO3419 Datasheet

Part Number AO3419
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 20V P-Channel MOSFET
Datasheet AO3419 DatasheetAO3419 Datasheet (PDF)

AO3419 20V P-Channel MOSFET General Description The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85mΩ < 102mΩ < 140mΩ HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratin.

  AO3419   AO3419






Part Number AO3418L
Manufacturers KERSEMI
Logo KERSEMI
Description N-Channel MOSFET
Datasheet AO3419 DatasheetAO3418L Datasheet (PDF)

Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Prod.

  AO3419   AO3419







Part Number AO3418
Manufacturers KERSEMI
Logo KERSEMI
Description N-Channel MOSFET
Datasheet AO3419 DatasheetAO3418 Datasheet (PDF)

Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Prod.

  AO3419   AO3419







Part Number AO3418
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Datasheet AO3419 DatasheetAO3418 Datasheet (PDF)

AO3418 30V N-Channel MOSFET General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 3.8A < 55mΩ < 65mΩ < 85mΩ SOT23 Top View Bottom View D D D S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise no.

  AO3419   AO3419







Part Number AO3416L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO3419 DatasheetAO3416L Datasheet (PDF)

Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS =.

  AO3419   AO3419







20V P-Channel MOSFET

AO3419 20V P-Channel MOSFET General Description The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85mΩ < 102mΩ < 140mΩ HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±12 -3.5 -2.8 -17 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units ° C/W ° C/W ° C/W Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3419 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.5A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-0.5A gFS VSD IS Forward Tran.


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