AO3434A
30V N-Channel MOSFET
General Description
Product Summary
The AO3434A combines advanced trench MOSFET technolo...
AO3434A
30V N-Channel
MOSFET
General Description
Product Summary
The AO3434A combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V)
Typical ESD protection
30V 4A < 52mΩ < 60mΩ < 78mΩ
HBM Class 3A
SOT23
Top View
Bottom View
D
D D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 30 ±12 4 3 20 1.4 0.9
-55 to 150
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ...