AO3435
20V P-Channel MOSFET
General Description
The AO3435 uses advanced trench technology to provide excellent RDS(ON)...
AO3435
20V P-Channel
MOSFET
General Description
The AO3435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.5V. This device is suitable for use in buck convertor applications.
Product Summary
VDS = -20V ID = -3.5A RDS(ON) < 70mΩ RDS(ON) < 90mΩ
RDS(ON) < 110mΩ RDS(ON) < 130mΩ
(VGS = -4.5V) (VGS =- 4.5V) (VGS = -2.5V) (VGS = -1.8V) (VGS = -1.5V)
SOT23
Top View
Bottom View
D D
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source
Voltage
VDS -20
Gate-Source
Voltage
VGS ±8
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
-3.5 -2.9 ID -2.7 -2.3 IDM -25
TA=25°C Power Dissipation A TA=70°C
1.4 1 PD 0.9 0.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s...
