July 2001
AO4401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench...
July 2001
AO4401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
A B
Maximum -30 ±12 -6.1 -5.1 -60 3 2.1 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4401
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate
Voltage Drain Current Gate-Body leakage current Gate Threshold
Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VD...