AO4406

March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 11.5 9.6 80 25 78 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C EAV PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 23 48 12 Max 40 65 16 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4406 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A VGS=2.5V, ID=8A gFS VSD IS Forward Transconductance VDS=5V, ID=10A 25 I...