AO4408, AO4408L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408 uses advanced trench ...
AO4408, AO4408L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage Gate-Source
Voltage Continuous Drain A Current Pulsed Drain Current B Avalanche Current
B,E B,E
Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150
Units V V A A mJ W °C
VGS TA=25°C TA=70°C ID IDM IAV L=0.1mH EAV PD TJ, TSTG TA=25°C
Repetitive Avalanche Energy Power Dissipation
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 23 48 12
Max 40 65 16
Units °C/W °C/W °C/W
1/5
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Free Datasheet http://www.datasheet4u.com/
AO4408, AO4408L
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5...
