AO4412 N-Channel Enhancement Mode Field Effect Transistor
General Description
www.DataSheet4U.com provide
Features
VDS ...
AO4412 N-Channel Enhancement Mode Field Effect Transistor
General Description
www.DataSheet4U.com provide
Features
VDS (V) = 30V ID = 8.5A (V GS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V)
The AO4412 uses advanced trench technology to excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4412L is a Green Product ordering option. AO4412 and AO4412L are electrically identical.
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG
Maximum 30 ±12 8.5 7.1 60 3 2.1 -55 to 150
Units V V A
W °C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4412
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON)
www.DataSheet4U.com
Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C ...