AO4415

August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -8 -6.6 -40 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-8A TJ=125°C VGS=-10V, ID=-8A VGS=-6V, ID=-5A VDS=-5V, ID=-8A Min -30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold ...