AO4420A

AO4420A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420A uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current AF ID TA=70°C Pulsed Drain Current B B Maximum 30 ±12 13.7 9.7 60 20 60 3.1 2 -55 to 150 Units V V A A mJ W °C Avalanche Current Repetitive avalanche energy L=0.3mHB Power Dissipation TA=25°C TA=70°C IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-AmbientA Maximum Junction-to-LeadC Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4420A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS...