AO4423/AO4423L
30V P-Channel MOSFET
General Description
The AO4423/AO4423L uses advanced trench technology to provide e...
AO4423/AO4423L
30V P-Channel
MOSFET
General Description
The AO4423/AO4423L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
(VGS = -20V) (VGS = -20V) (VGS = -10V)
* RoHS and Halogen-Free Compliant
ESD Protected 100% UIS tested 100% Rg tested (note *)
Top View
D D D D
SOIC-8 Bottom View
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
Power Dissipation A
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA...