AO4600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench techno...
AO4600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary
MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
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G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source
Voltage 30 DS VGS Gate-Source
Voltage ±12 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 ±12 -5 -4.2 -30 2 1.44 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
6.9 5.8 40 2 1.44 -55 to 150
W °C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead
Symbol RθJA RθJL
Typ 48 74 35
Max 62.5 110 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4600
n-channel
MOSFET Electrical Characteristics (T J=25°C unless ...