AO4614A

AO4614A Complementary Enhancement Mode Field Effect Transistor General Description The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 G2 S2 G1 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM 6 5 20 Power Dissipation TA=25°C TA=70°C PD 2 1.28 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -40 ±20 -5 -4 -20 2 1.28 -55 to 150 Units V V A W °C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ Max Units 48 62.5 °C/W 74 110 °C/W 35 50 °C/W 48 62.5 °C/W 74 110 °C/W 35 50 °C/W ...