AO4617

www.DataSheet4U.com AO4617 Complementary Enhancement Mode Field Effect Transistor General Description The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 32mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) < 75mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 SOIC-8 n-channel S2 S1 p-channel Max p-channel -40 ±20 -5 -4 -25 2 1.28 17 43 -55 to 150 W A mJ °C A Units V V Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Avalanche Current B TA=25°C TA=70°C TA=25°C TA=70°C B 6 ID IDM PD IAR EAR TJ, TSTG 5 30 2 1.28 13 25 -55 to 150 Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State ...