AO4618

AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 40V ID= 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 27mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -40V -7A (VGS=-10V) RDS(ON) < 23mΩ (VGS=-10V) < 30mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D2 D1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 G2 5 D1 G1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C 8 ID 6 IDM 40 IAS 15 EAS 11 -7 -5.5 -35 -35 61 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev.1. 0: August 2013 www.aosmd.com Page 1 of 9 AO4618 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ...