AO4862

AO4862 30V Dual N-Channel AlphaMOS General Description Trench Power AlphaMOS (αMOS LV) technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Application System switch, inverter Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 4.5A < 50mΩ < 68mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G1 Pin1 Orderable Part Number AO4862 Package Type SO-8 Form Tape & Reel D1 D2 G2 S1 S2 Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VGS ID IDM IAS EAS VDS Spike Power Dissipation B 10µs TA=25°C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 4.5 3.5 18 8 3 36 1.7 1.1 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 52 80 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.0: May 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V...