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AO6409A Datasheet

Part Number AO6409A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO6409A DatasheetAO6409A Datasheet (PDF)

AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5.5A < 41mW < 53mW < 65mW TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum .

  AO6409A   AO6409A






Part Number AO6409L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO6409A DatasheetAO6409L Datasheet (PDF)

Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS =.

  AO6409A   AO6409A







Part Number AO6409
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO6409A DatasheetAO6409 Datasheet (PDF)

Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS =.

  AO6409A   AO6409A







P-Channel MOSFET

AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5.5A < 41mW < 53mW < 65mW TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.2 -30 2.1 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 48 75 37 Max 60 90 45 D S Units V V A W °C Units °C/W °C/W °C/W Rev 4.0: January 2019 www.aosmd.com Page 1 of 5 AO6409A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±8V VDS=VGS, ID=-2.


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