AO6420

AO6420 60V N-Channel MOSFET General Description The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A,F TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 4.2 3.4 20 2.00 1.28 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 D S Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6420 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.2A Static Drain-Source On-R...