AO6424A

AO6424A 30V N-Channel MOSFET General Description Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Application System/Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 6.5A < 35mΩ < 48mΩ TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6424A Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6.5 5 27 2.5 1.5 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 42 68 23 Max 50 85 30 Units °C/W °C/W °C/W Rev.1.0: October 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V ...