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AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses ...
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AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications). AO8801L is a Green Product ordering option. AO8801 and AO8801L are electrically identical.
Features
VDS (V) = -20V ID = -4.7 A (V GS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM
TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1
D
D2
G2 S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 ±8 -4.7 -3.7 -30 1.4 0.9 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 73 96 63
Max 90 125 75
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO8801
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Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Break...