AO8810
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8810 uses advanced trench tec...
AO8810
20V Common-Drain Dual N-Channel
MOSFET
General Description
Product Summary
The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS= 4.5V) RDS(ON) (at VGS = 4.0V) RDS(ON) (at VGS = 3.1V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V)
ESD protected
20V 7A < 20mΩ < 20.5mΩ < 21.5mΩ < 23mΩ < 28mΩ
TSSOP8
Top View
Bottom View
Pin 1
TSSOP-8 Top View
D1/D2 S1 S1 G1
1 2 3 4
8 D1/D2 7 S2
6 S2 5 G2
D1 G1 1.8KΩ
G2 1.8KΩ
S1
D2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±8 ...