www.DataSheet4U.com
AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The...
www.DataSheet4U.com
AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications). AO8816L is a Green Product ordering option. AO8816 and AO8816L are electrically identical.
Features
VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 30 ±12 8 6 30 1.5 1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO8816
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON) RDS(...