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AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The...
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AO8818 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8818 is Pb-free (meets ROHS & Sony 259 specifications). AO8818L is a Green Product ordering option. AO8818 and AO8818L are electrically identical.
Features
VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 2.5V) ESD Rating: 1500V HBM
D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO8818
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Electrical Charac...