AO8832

www.DataSheet4U.com AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8832 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 31mΩ (VGS = 3.6V) RDS(ON) < 39mΩ (VGS = 2.5V) D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 67 110 62 Max 85 130 75 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO8832 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID...