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AOB280L Datasheet

Part Number AOB280L
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet AOB280L DatasheetAOB280L Datasheet (PDF)

isc N-Channel MOSFET Transistor AOB280L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Ga.

  AOB280L   AOB280L






Part Number AOB280L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOB280L DatasheetAOB280L Datasheet (PDF)

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary The AOT280L/AOB280L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V.

  AOB280L   AOB280L







N-Channel MOSFET

isc N-Channel MOSFET Transistor AOB280L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pulsed 560 A PD Total Dissipation @TC=25℃ 333 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.45 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 20A IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VGS= ±20V;VDS= 0V VDS= 80V; VGS= 0V VDS= 80V; VGS= 0V;TJ= 55℃ Is= 1A; VGS = 0V AOB280L MIN MAX UNIT 80 V 2.4 3.4 V 2.2 mΩ ±100 nA 1 5 μA 1 V NOTICE: ISC reserves the rights to .


2020-11-27 : SPA11N65C3    SPA12N50C3    SPA16N50C3    SPA08N50C3    SPB04N50C3    SPA21N50C3    AOB2146L    AOT2146L    AOB2906    AOB2904   


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